Current-controlled negative resistance (CCNR) in SiC P-i-N rectifiers

Author

Ramungul, Nudjarin ; Chow, T. Paul

Author_Institution

Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA

Volume

46

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

493

Lastpage

496

Abstract

This paper presents an experimental demonstration of a current-controlled negative resistance (CCNR) in the forward characteristics of 6H-SiC P-i-N rectifiers. These forward characteristics indicate that the poor electrical performance of SiC diodes arises because conductivity modulation is not yet established. The cause of this behavior appears to be high defect densities and low minority carrier lifetime in the lightly doped drift region. N⁺P junctions exhibit excellent forward characteristics with forward drop of 2.8 V at 100 A/cm² and 3.9 V at 1000 A/cm² without entering the CCNR mode when traps have been filled prior to the measurement

Keywords

carrier lifetime; minority carriers; negative resistance; p-i-n diodes; power semiconductor diodes; semiconductor device models; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 2.8 to 3.9 V; 6H-SiC; N⁺P junctions; SiC; SiC P-i-N rectifiers; conductivity modulation; current-controlled negative resistance; forward characteristics; high defect densities; lightly doped drift region; low minority carrier lifetime; Charge carrier lifetime; Conductivity; Current density; Manufacturing industries; P-i-n diodes; PIN photodiodes; Rectifiers; Silicon carbide; Subcontracting; Thyristors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.748867

Filename

748867