S6-G4: High injection and efficiency droop in GaInN light-emitting diodes

Author

Guan-Bo Lin ; Meyaard, David S. ; Schubert, E. Fred ; Jaehee Cho ; Jong Kyu Kim ; Hyunwook Shim ; Min-Ho Kim ; Cheolsoo Sone

Author_Institution

Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytech. Inst. Troy, Troy, NY, USA

fYear

2014

fDate

5-7 Aug. 2014

Firstpage

1

Lastpage

3

Abstract

An evident correlation between the high injection and the efficiency droop is demonstrated in GaInN light-emitting diodes (LEDs) for temperature ranging from 80K to 450K. For this temperature range, the efficiency droop has the same thermal tendency with the high injection, i.e. the onset shifts to lower voltage and higher current with increasing temperature. The voltage difference between two onsets mainly falls on the resistive p-type region and induces strong electric field to enable electron drift leakage and the resulting efficiency droop.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; GaInN; LED; efficiency droop; electron drift leakage; high injection; light emitting diodes; resistive p-type region; strong electric field induction; temperature 80 K to 450 K; voltage difference; Charge carrier processes; Electric fields; Light emitting diodes; Radiative recombination; Temperature distribution; Temperature measurement; GaInN; efficiency droop; electron leakage; high injection; light-emitting diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Lester Eastman Conference on High Performance Devices (LEC), 2014

Conference_Location

Ithaca, NY

Type

conf

DOI

10.1109/LEC.2014.6951572

Filename

6951572