Physical Features of the Barrier-Controlled Blocking Function of the Static Induction Thyristor

The physical features of the barrier-controlled blocking function of static induction thyristors (SITHs) are elaborated in detail from a new point of view. The correlative subjects are experimentally studied. The geometrical structure, the fabrication technology, the biasing conditions, the I -V characteristic, the conception, and the definition of the channel pinchoff of the SITH are discussed. Emphases are on the new ideas of the channel-barrier formation, the features of the channel barrier, the relationship between the barrier and the geometrical structure, and the biasing conditions. The physical mechanisms of the capability of blocking the current and bearing a high voltage are analyzed in depth.