Near room-temperature continuous-wave operation of electrically pumped 1.55 μm vertical cavity lasers with InGaAsP/InP bottom mirror

Author

Rapp, S. ; Salomonsson, F. ; Bentell, J. ; Sagnes, I. ; Moussa, H. ; Meriadec, C. ; Raj, R. ; Streubel, K. ; Hammar, M.

Author_Institution

Dept. of Electron., R. Inst. of Technol., Kista, Sweden

Volume

35

Issue

1

fYear

1999

fDate

1/7/1999 12:00:00 AM

Firstpage

49

Lastpage

50

Abstract

The first near room-temperature continuous-wave (CW) operation of a vertical cavity laser based on an epitaxial InGaAsP/InP bottom mirror is reported. The structure employs a package of nine strain compensated GaInAsP quantum wells and a wafer-fused GaAs/AlGaAs top mirror. For a 10 μm diameter device, the threshold current is 6 mA and the input threshold power is 21 mW. The maximum operating temperature is 17 and 101°C for CW and pulsed conditions, respectively

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; quantum well lasers; 1.55 micron; 10 micron; 17 C; 21 mW; 6 mA; InGaAsP-InP; electrical pumping; epitaxial InGaAsP/InP bottom mirror; input threshold power; room temperature continuous wave operation; strain compensated GaInAsP quantum well; threshold current; vertical cavity laser; wafer fused GaAs/AlGaAs top mirror;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19990014

Filename

749215