Front-end modules with versatile dynamic EVM correction for 802.11 applications in the 2GHz band

Author

Samelis, Apostolos ; Whittaker, Edward ; Ball, M. ; Bruce, Allan ; Nisbet, John ; Lui Lam ; Vaillancourt, William

Author_Institution

Skyworks Solutions Inc., Bishop´s Stortford, UK

fYear

2014

fDate

19-23 Jan. 2014

Firstpage

10

Lastpage

12

Abstract

A SiGe BiCMOS, CMOS/SOI front-end module (FEM) for WLAN applications in the 2GHz band is presented. In the transmit mode it delivers 29dB small-signal gain and 3% EVM at 19.3dBm. In the receive mode, it achieves a noise figure of 1.85dB, 14dB gain, and an IIP3 level of 3dBm with 9mA current consumption. The FEM employs bias control circuitry that can be configured to address the linearity requirements of the WLAN standards family under varying environmental and channel conditions, including the emerging 802.11ac standard.

Keywords

BiCMOS analogue integrated circuits; CMOS analogue integrated circuits; Ge-Si alloys; elemental semiconductors; microwave integrated circuits; silicon; silicon compounds; silicon-on-insulator; wireless LAN; 802.11 applications; BiCMOS; CMOS/SOI FEM; IIP3 level; Si; SiGe; WLAN applications; bias control circuitry; current 9 mA; dynamic EVM correction; frequency 2 GHz; front-end modules; gain 14 dB; gain 29 dB; noise figure; receive mode; small-signal gain; transmit mode; Finite element analysis; IEEE 802.11 Standards; Modulation; Power amplifiers; Transient analysis; Wireless LAN; 802.11ac; Front end modules; WLAN; dynamic EVM; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Amplifiers for Wireless and Radio Applications (PAWR), 2014 IEEE Topical Conference on

Conference_Location

Newport Beach, CA

Print_ISBN

978-1-4799-2298-7

Type

conf

DOI

10.1109/PAWR.2014.6825719

Filename

6825719