DocumentCode
1480910
Title
Capacitive-access CAM cell and its read/write circuit implementation
Author
Johnson, L.G.
Volume
27
Issue
10
fYear
1991
fDate
5/9/1991 12:00:00 AM
Firstpage
876
Lastpage
878
Abstract
The implementation of a capacitive-access CAM cell along with its read/write circuitry are presented. Its advantages over a standard CAM cell are: feasibility of implementing multicell write operation, ready availability of masking of individual bits of a word for the write operation, and a higher order of cell data stability. A fully functional chip has been fabricated through MOSIS using 2 mu m double-metal CMOS technology.
Keywords
CMOS integrated circuits; cellular arrays; content-addressable storage; integrated memory circuits; 2 micron; MOSIS; capacitive-access CAM cell; cell data stability; double-metal CMOS technology; masking; multicell write operation; read/write circuit implementation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910549
Filename
74982
Link To Document