A 325 GHz InP HBT Differential-Mode Amplifier

Author

Hacker, J.B. ; Lee, Y.M. ; Park, H.J. ; Rieh, J.-S. ; Kim, M.

Author_Institution

Teledyne Sci. Co., Thousand Oaks, CA, USA

Volume

21

Issue

5

fYear

2011

fDate

5/1/2011 12:00:00 AM

Firstpage

264

Lastpage

266

Abstract

An MMIC amplifier operating at the highest reported frequency up to date for indium-phosphide double-heterojunction bipolar (DHBT) transistor technology is presented. The amplifier chain consists of seven unit-cell stages that contain differential-pair common-base HBTs and compact inverted microstrip matching networks. Amplifier operation in differential mode generates a virtual RF ground at a convenient location inside the unit cell. The measurements at 325 GHz show a small signal gain of 25 dB and a maximum output power of -1.5 dBm. An amplifier gain of greater than 20 dB is observed over 60 GHz bandwidth extending from 285 to 345 GHz.

Keywords

III-V semiconductors; MMIC amplifiers; differential amplifiers; heterojunction bipolar transistors; indium compounds; submillimetre wave amplifiers; submillimetre wave transistors; HBT differential-mode amplifier; InP; MMIC amplifier; bandwidth 60 GHz; differential-pair common-base HBT; double-heterojunction bipolar transistor technology; frequency 285 GHz to 345 GHz; gain 25 dB; small signal gain; virtual RF ground; Gain; Heterojunction bipolar transistors; Impedance matching; Indium phosphide; Metals; Power generation; Resistors; InP HBT; monolithic microwave integrated circuit (MMIC); terahertz amplifier;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2011.2116152

Filename

5739124