Channel temperature measurement using pulse-gate method [power amplifier FET]

Author

Chen, Shen-Whan ; Duong, Trung ; Luo, Min-Yih

Author_Institution

Hughes Space & Commun. Co., Los Angeles, CA, USA

Volume

47

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

362

Lastpage

365

Abstract

In this paper, we report on an approach of measuring power amplifier field-effect transistor (FET) channel temperature under real-world operating conditions. The principle of this approach is to compare the magnitude of power amplifier gain at both DC and pulse bias conditions. By utilizing the temperature-dependent gain characteristic of the power amplifier FET and applying pulse-gate control, the gain would gradually decrease with the rising temperature of the hot plate. The channel temperature is then determined when the decreasing gain reaches the level of the base line, which is measured under the specified DC bias and radiofrequency conditions

Keywords

MMIC power amplifiers; integrated circuit testing; microwave field effect transistors; microwave integrated circuits; microwave power amplifiers; power field effect transistors; semiconductor device measurement; temperature measurement; DC conditions; FET channel temperature; MIC; MMIC; channel temperature measurement; field-effect transistor; hot plate; power amplifier FET; power amplifier gain; pulse bias conditions; pulse-gate method; self-heating effect; temperature-dependent gain characteristic; FETs; Gain measurement; Power amplifiers; Power measurement; Pulse amplifiers; Pulse measurements; Radio frequency; Radiofrequency amplifiers; Temperature control; Temperature measurement;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.750242

Filename

750242