DocumentCode
1481491
Title
Vertical Graphene Base Transistor
Author
Mehr, Wolfgang ; Dabrowski, Jarek ; Scheytt, J. Christoph ; Lippert, Gunther ; Xie, Ya-Hong ; Lemme, Max C. ; Ostling, Mikael ; Lupina, Grzegorz
Author_Institution
IHP GmbH, Frankfurt (Oder), Germany
Volume
33
Issue
5
fYear
2012
fDate
5/1/2012 12:00:00 AM
Firstpage
691
Lastpage
693
Abstract
We present a novel graphene-based-device concept for a high-frequency operation: a hot-electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows terahertz operation. Based on energy-band considerations, we propose a specific material solution that is compatible with SiGe process lines.
Keywords
graphene; hot electron transistors; GBT; energy-band consideration; graphene-based-device concept; high current gain; high frequency operation; hot electron graphene base transistor; material solution; small signal model; terahertz operation; vertical graphene base transistor; Electric potential; Integrated circuits; Quantum capacitance; Radio frequency; Transistors; Tunneling; Graphene; hot-electron transistor (HET); radio frequency (RF);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2012.2189193
Filename
6177217
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