Charge-Carrier Velocity Distributions in High-Mobility Polymer Dual-Gate Thin-Film Transistors

Author

Ha, Tae-Jun ; Sonar, Prashant ; Dodabalapur, Ananth

Author_Institution

Univ. of Texas at Austin, Austin, TX, USA

Volume

33

Issue

6

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

899

Lastpage

901

Abstract

We report charge-carrier velocity distributions in high-mobility polymer thin-film transistors (PTFTs) employing a dual-gate configuration. Our time-domain measurements of dual-gate PTFTs indicate higher effective mobility as well as fewer low-velocity carriers than in single-gate operation. Such nonquasi-static (NQS) measurements support and clarify the previously reported results of improved device performance in dual-gate devices by various groups. We believe that this letter demonstrates the utility of NQS measurements in studying charge-carrier transport in dual-gate thin-film transistors.

Keywords

polymers; thin film transistors; charge-carrier transport; charge-carrier velocity distributions; dual-gate PTFT; dual-gate devices; high-mobility polymer dual-gate thin-film transistors; high-mobility polymer thin-film transistors; low-velocity carriers; nonquasi-static measurements; time-domain measurements; Charge carriers; Logic gates; Performance evaluation; Polymers; Semiconductor device measurement; Thin film transistors; Charge-carrier transport; dual-gate configuration; nonquasi-static (NQS) measurements; polymer thin-film transistors (PTFTs); velocity distributions;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2190034

Filename

6177648