A Novel Low-Voltage Low-Power Programming Method for NAND Flash Cell by Utilizing Self-Boosting Channel Potential for Carrier Heating

Author

Tsai, Wen-Jer ; Huang, J.S. ; Tsai, Ping-Hung ; Yan, S.G. ; Cheng, Cheng-Hsien ; Cheng, C.C. ; Chen, Yin-Jen ; Lee, Chih-Hsiung ; Han, Tzung-Ting ; Lu, Tao-Cheng ; Chen, Kuang-Chao ; Lu, Chih-Yuan

Author_Institution

Macronix Int. Co., Ltd., Hsinchu, Taiwan

Volume

58

Issue

6

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

1620

Lastpage

1627

Abstract

A novel low-voltage low-power programming method for NAND Flash cell is presented. By utilizing the self-channel boosting technique, a sufficiently high local field is established in a NAND string that causes efficient hot-carrier injection. This method has been successfully demonstrated in the 75-nm-node floating-gate NAND cells, along with comprehensive studies on bias and timing effects. Requirements for high-voltage supporting devices, circuitry, and process in conventional Fowler-Nordheim programmed NAND cells are greatly mitigated. It would be very attractive for scaled NAND Flash technology in the future.

Keywords

NAND circuits; hot carriers; low-power electronics; NAND flash cell; bias effects; floating-gate NAND cells; hot-carrier injection; low-voltage low-power programming; self-boosting channel potential; timing effects; Boosting; Computer architecture; Electric potential; Flash memory; Heating; Microprocessors; Programming; Disturb; Fowler–Nordheim (FN) tunneling; hot-carrier injection; nand Flash; nonvolatile memory; self-channel boosting; source-side injection;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2123898

Filename

5740325