• DocumentCode
    1483514
  • Title

    A Bendable-Channel FinFET for Logic Application

  • Author

    Kwon, Soon-Gyu ; Han, Jin-Woo ; Choi, Yang-Kyu

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
  • Volume
    31
  • Issue
    6
  • fYear
    2010
  • fDate
    6/1/2010 12:00:00 AM
  • Firstpage
    624
  • Lastpage
    626
  • Abstract
    Bendable-channel fin field-effect transistor (FET) (FinFET) (BC-FinFET) is presented for the basic logic family that includes nand, nor , and pass gate. The BC-FinFET can replace the suspended-gate FET (SGFET), and its function is very similar to that of a double-gate MOSFET. The BC-FinFET is composed of an n-type and p-type MOSFETs, and hence, it can be applicable for logic circuits. Numerical simulations based on elementary characteristics extracted from the fabricated BC-FinFET have been carried out for nand and nor circuits from an input-output characteristics´ point of view. The proposed architecture can improve the standby and dynamic power consumption by reduction of the number of SGFETs and the size of the chip, while improving circuit performance.
  • Keywords
    MOSFET; NAND circuits; NOR circuits; logic circuits; numerical analysis; power consumption; bendable-channel FinFET; double-gate MOSFET; dynamic power consumption; field-effect transistor; logic application; logic circuits; numerical simulations; standby-dynamic power consumption; Bendable channel; CMOS; FinFET; double-gate (DG) MOSFET; logic circuit; suspended-gate FET (SGFET);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2046614
  • Filename
    5458030