Impact of Technology Scaling on the Heavy-Ion Upset Cross Section of Multi-Level Floating Gate Cells

Author

Bagatin, Marta ; Gerardin, Simone ; Paccagnella, Alessandro ; Visconti, Angelo

Author_Institution

Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova, Italy

Volume

58

Issue

3

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

969

Lastpage

974

Abstract

The corruption of the information stored in floating gate cells due to heavy-ion strikes is a critical issue for the use of Flash memories in space. In this work we examine how feature size scaling affects the single event upset sensitivity of multi-level floating gate cells with NAND architecture. Both experimental data on heavy-ion irradiation and analytical modeling are used to study how the threshold LET and saturation cross section depend on the cell feature size. A comparison is also carried out between multi-level and single-level floating gate cells.

Keywords

flash memories; radiation hardening (electronics); analytical modeling; feature size scaling; flash memories; heavy-ion irradiation; heavy-ion upset cross section; multilevel floating gate cells; saturation cross section; technology scaling; threshold LET; Bars; Data models; Flash memory; Radiation effects; Single event upset; Threshold voltage; Flash memories; heavy ions; radiation effects; single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2122268

Filename

5740382