Pre-silicon parameter generation methodology using BSIM3 for circuit performance-oriented device optimization

Author

Miyama, Mikako ; Kamohara, Shiro ; Hiraki, Mitsuru ; Onozawa, Kazunori ; Kunitomo, Hisaaki

Author_Institution

Semicond. & Integrated Circuits Div., Hitachi Ltd., Tokyo, Japan

Volume

14

Issue

2

fYear

2001

fDate

5/1/2001 12:00:00 AM

Firstpage

134

Lastpage

142

Abstract

We present a physical parameter extraction methodology for BSIM3v3 to generate accurate pre-silicon parameters (parameters created before device fabrication). Using this method, the parameters of the 0.20-μm process device can be generated from a 0.25-μm technology with 5% accuracy in a few minutes. We applied this method in optimizing the devices of our microprocessor in the early stages of design

Keywords

VLSI; circuit optimisation; circuit simulation; digital simulation; integrated circuit design; integrated circuit modelling; parameter estimation; 0.2 micron; BSIM3; IC design; VLSI; microprocessor; parameter generation methodology; performance-oriented device optimization; physical parameter extraction methodology; Capacitance; Character generation; Design optimization; Energy consumption; Integrated circuit interconnections; Optimization methods; Optimized production technology; Power supplies; Predictive models; Threshold voltage;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.920724

Filename

920724