• DocumentCode
    1484141
  • Title

    Energy effect of the laser-induced vertical metallic link

  • Author

    Zhang, Wei ; Lee, Joo-Han ; Bernstein, Joseph B.

  • Author_Institution
    Dept. of Mater. & Nucl. Eng., Maryland Univ., College Park, MD, USA
  • Volume
    14
  • Issue
    2
  • fYear
    2001
  • fDate
    5/1/2001 12:00:00 AM
  • Firstpage
    163
  • Lastpage
    169
  • Abstract
    In this paper, the energy effect of the laser vertical metallic link is investigated from a microscopic point of view through experimental observations and simulations. Sample structures that were irradiated under different laser energies were cross-sectioned and observed using a FIB/SEM dual-beam system. Failure criterion at the high energy level was defined by excessive material loss in the lower metal (metal 1) and passivation cracking. Micro-images also suggest that, for an optimal link metal (metal 2) opening should be larger than the lower metal linewidth considering the dielectric-step-induced lens effect. Taking into account both measured electrical resistance and observed voids in the lower metal, the normalized energy process window is defined to be the absolute energy range divided by the average energy. For the structures with 1-, 2-, 3-, and 4-μm lower metal linewidths, the relative process windows are 0.83, 0.87, 0.9, and 0.96, respectively. Simulations also revealed consistent results with the experimental observations, which is a monotonically decreasing trend of relative energy process windows for more scaled links. A simple equation to evaluate the spot size of the laser beam for various link structures is presented. These results demonstrate the application of commercially viable vertical linking technology to VLSI applications
  • Keywords
    VLSI; focused ion beam technology; integrated circuit interconnections; integrated circuit metallisation; integrated circuit yield; laser materials processing; scanning electron microscopy; 1 to 4 micron; FIB/SEM dual-beam system; VLSI applications; absolute energy range; dielectric-step-induced lens effect; electrical resistance; energy effect; excessive material loss; laser-induced vertical metallic link; metal linewidth; normalized energy process window; passivation cracking; relative energy process windows; spot size; vertical linking technology; voids; Dielectric materials; Dielectric measurements; Electrical resistance measurement; Energy states; Inorganic materials; Lenses; Numerical analysis; Optical materials; Passivation; Scanning electron microscopy;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.920728
  • Filename
    920728