Verilog-A Modeling of Radiation-Induced Mismatch Enhancement

Author

Gorbunov, Maxim S. ; Danilov, Igor A. ; Zebrev, Gennady I. ; Osipenko, Pavel N.

Author_Institution

Comput. Eng. Dept. (ORVT), Russian Acad. of Sci., Moscow, Russia

Volume

58

Issue

3

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

785

Lastpage

792

Abstract

Physical model of TID effects is embedded into BSIM3v3 model implemented using Verilog-A. Radiation-induced mismatch enhancement due to the combined action of technology variations and electrical bias difference is demonstrated by simulation. It is shown that the total ionizing dose degradation of circuit components under inequivalent electric field conditions could lead to mismatch of internal circuit parameters, which results in a change to circuit output mismatch parameters.

Keywords

CMOS integrated circuits; hardware description languages; integrated circuit modelling; radiation hardening (electronics); Verilog-A modeling; circuit components; circuit output mismatch parameters; electrical bias difference; inequivalent electric field conditions; internal circuit parameters; radiation-induced mismatch enhancement; technology variations; total ionizing dose degradation; Degradation; Hardware design languages; Integrated circuit modeling; Logic gates; Radiation effects; Threshold voltage; Transistors; CMOS; SPICE; TID; Verilog-A; mismatch; simulation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2010.2104162

Filename

5740970