DocumentCode
1486402
Title
Min m.i.s. schottky barrier solar cells¿a review
Author
Lam, Y.W.
Author_Institution
Chinese University of Hong Kong, Department of Electronics, Shatin, Hong Kong
Volume
51
Issue
9
fYear
1981
fDate
9/1/1981 12:00:00 AM
Firstpage
447
Lastpage
454
Abstract
Problems inherent in conventional p-n junction solar cells are discussed. The principle of operation of min m.i.s. solar cells is then described. Among other advantages it is shown that the min m.i.s. solar cells are capable of giving a much higher Voc compared to the p-n junction solarcells. Problems associated with the min m.i.s. solar cells are also discussed. These include the incompatibility of light transmission and conductivity properties of the metal contact in the case of the contact covering the whole of the top surface, the contact linewidth/space ratio in the case of grating cells, resistivity dependence of Voc and degradation of cell performance in time.
Keywords
Schottky-barrier diodes; metal-insulator-semiconductor devices; solar cells; conductivity; degradation; light transmission; metal contact; minority carrier MIS Schottky barrier solar cells; resistivity;
fLanguage
English
Journal_Title
Radio and Electronic Engineer
Publisher
iet
ISSN
0033-7722
Type
jour
DOI
10.1049/ree.1981.0068
Filename
5269765
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