• DocumentCode
    1486402
  • Title

    Min m.i.s. schottky barrier solar cells¿a review

  • Author

    Lam, Y.W.

  • Author_Institution
    Chinese University of Hong Kong, Department of Electronics, Shatin, Hong Kong
  • Volume
    51
  • Issue
    9
  • fYear
    1981
  • fDate
    9/1/1981 12:00:00 AM
  • Firstpage
    447
  • Lastpage
    454
  • Abstract
    Problems inherent in conventional p-n junction solar cells are discussed. The principle of operation of min m.i.s. solar cells is then described. Among other advantages it is shown that the min m.i.s. solar cells are capable of giving a much higher Voc compared to the p-n junction solarcells. Problems associated with the min m.i.s. solar cells are also discussed. These include the incompatibility of light transmission and conductivity properties of the metal contact in the case of the contact covering the whole of the top surface, the contact linewidth/space ratio in the case of grating cells, resistivity dependence of Voc and degradation of cell performance in time.
  • Keywords
    Schottky-barrier diodes; metal-insulator-semiconductor devices; solar cells; conductivity; degradation; light transmission; metal contact; minority carrier MIS Schottky barrier solar cells; resistivity;
  • fLanguage
    English
  • Journal_Title
    Radio and Electronic Engineer
  • Publisher
    iet
  • ISSN
    0033-7722
  • Type

    jour

  • DOI
    10.1049/ree.1981.0068
  • Filename
    5269765