Development of Quantum Hall Array Resistance Standards at NMIJ

Author

Oe, Takehiko ; Matsuhiro, Kenjiro ; Itatani, Taro ; Gorwadkar, Sucheta ; Kiryu, Syogo ; Kaneko, Nobu-hisa

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Nat. Metrol. Inst. of Japan, Tsukuba, Japan

Volume

60

Issue

7

fYear

2011

fDate

7/1/2011 12:00:00 AM

Firstpage

2590

Lastpage

2595

Abstract

A quantum Hall array resistance standard (QHARS) device with a nominal value close to 10 kΩ on the i = 2 plateau has been developed on a GaAs/AlGaAs heterosubstrate. This QHARS device consists of 266 Hall bar elements, and its nominal value has only 0.0342 × 10^-6 difference based on R_K-90 ( = 25 812.807 Ω) from an integer value of 10⁴. As a result of comparison measurements with the conventional Quantized Hall Resistance Standard via the 100- Ω standard resistor, the value of the QHARS device agrees with its nominal value within 3.5 × 10^-8.

Keywords

calibration; electric resistance measurement; quantum Hall effect; Hall bar elements; heterosubstrate; quantum Hall array resistance standards; Arrays; Electrical resistance measurement; Insulation; Resistance; Resistors; Standards; Wiring; 10-$hbox{k}Omega$ QHARS; DC resistance standards; photosensitive polyimide (PI); quantized Hall resistance (QHR); quantum Hall array resistance standard (QHARS); quantum Hall effect (QHE);

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/TIM.2010.2100630

Filename

5741726