Accurate resistance measuring method for high density post-bond TSVs in 3D-SIC with Electrical Probes

In this paper, we propose a new method that can measure the resistance of high density post-bond TSVs including serial micro-bumps and bond resistance. The key idea of the proposed technology is to use Electrical Probe embedded in the stacked silicon dies. It is a measuring circuit based on Analog Boundary-Scan (IEEE1149.4). We modify the standard Analog Boundary-Scan structure to realize the high measuring accuracy for TSVs in 3D-SIC. The main contribution of the method is to measure the resistance of high pin count (e.g. >10,000) post-bond TSVs accurately. Electrical Probes correspond to the high density of TSV (e.g. <; 40 um pitch) and work like as Kelvin probe. The measurement accuracy is less than 10 mΩ. We also introduce the preliminary results of small scale measuring experiments and the results of SPICE simulation of large scale measuring circuits.