An Optically Assisted Program Method for Capacitorless 1T-DRAM

Author

Moon, Dong-Il ; Choi, Sung-Jin ; Han, Jin-Woo ; Choi, Yang-Kyu

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea

Volume

57

Issue

7

fYear

2010

fDate

7/1/2010 12:00:00 AM

Firstpage

1714

Lastpage

1718

Abstract

This work is aimed at a novel program method that is assisted by light for capacitorless 1T-DRAM based on parasitic bipolar junction transistor operation. Experimental results clearly show that a flash of light triggers a distinctive binary memory state in the capacitorless 1T-DRAM. During the operation of the 1T-DRAM, the gate voltage is sustained at a negative, constant value. The sensing margin is 54 A and the hold state corresponding to the data retention time is retained over a few seconds. The proposed program method can therefore be considered as a promising candidate for future DRAM applications based on an optical interconnection system.

Keywords

DRAM chips; bipolar transistors; optical interconnections; capacitorless 1T-DRAM; distinctive binary memory state; optical interconnection system; optically assisted program; parasitic bipolar junction transistor; CMOS technology; Capacitors; MOSFETs; Moon; Optical interconnections; Optical sensors; Random access memory; Research and development; Transistors; Ultra large scale integration; Capacitorless 1T-DRAM; DRAM; FD SOI; MOSFET; eDRAM; optical interconnection; optical memory; parasitic bipolar junction transistor;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2047911

Filename

5462893