Sensitive stress-impedance micro sensor using amorphous magnetostrictive wire

Author

Shen, L.P. ; Uchiyama, T. ; Mohri, K. ; Kita, E. ; Bushida, K.

Author_Institution

Dept. of Electr. Eng., Nagoya Univ., Japan

Volume

33

Issue

5

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

3355

Lastpage

3357

Abstract

A giant stress-impedance (GSI) effect with the strain-gauge factor more than 1200 was found in negative magnetostrictive amorphous CoSiB wires of 30-μm diameter magnetized with a high frequency current or a sharp pulse current. A sensitive stress sensor is constructed using a CMOS IC multivibrator circuit in which the amorphous wire is magnetized with a sharp pulse train current. The amorphous wire GSI sensor will be applied for detection of such as pressure, tension, stream speed for liquid and gases and mechano-cardiogram with the sensitivity of 5-6 times higher than that of the semiconductor stress sensors utilizing the piezo-resistance effect showing a gauge factor of about 200

Keywords

amorphous magnetic materials; boron alloys; cobalt alloys; magnetic sensors; magnetostrictive devices; microsensors; silicon alloys; strain gauges; stress measurement; CMOS IC multivibrator circuit; CoSiB; GSI microsensor; amorphous magnetostrictive wire; giant stress impedance; high frequency current; pulse train current; strain gauge factor; stress sensor; Amorphous magnetic materials; Amorphous materials; CMOS integrated circuits; Frequency; Magnetic circuits; Magnetic semiconductors; Magnetic sensors; Magnetostriction; Stress; Wire;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.617942

Filename

617942