• DocumentCode
    1487835
  • Title

    Multi-Slot Main Memory System for Post DDR3

  • Author

    Lee, Jaejun ; Lee, Sungho ; Nam, Sangwook

  • Author_Institution
    Appl. Electromagn. Lab., Seoul Nat. Univ., Seoul, South Korea
  • Volume
    57
  • Issue
    5
  • fYear
    2010
  • fDate
    5/1/2010 12:00:00 AM
  • Firstpage
    334
  • Lastpage
    338
  • Abstract
    This brief introduces a suitable architecture for a high-data rate and high-density system using bidirectional single-ended signaling. For chip-to-chip interconnections requiring high speed and high density for the main memory system, an SSTL-II-based structure was previously used. However, this structure is no longer applicable for higher speeds at higher densities. By using an optimum reflection coefficient at the junction of a branch, a multislot system acts in the same way as a point-to point system. This architecture significantly improves the signal integrity. The simulated jitter and eye openings, including transmission line loss, were improved by 53.4% for write operation and 65.1% for read operations at 3.2 Gbps under heavy loading conditions. The peak-to-peak time jitters of 67.1 and 72.0 ps were measured at 3.3 Gbps.
  • Keywords
    DRAM chips; equalisers; integrated circuit interconnections; jitter; DRAM; SSTL-II-based structure; bidirectional single- ended signaling; bit rate 3.3 Gbit/s; dynamic random-access memory; high-density system; memory system; multislot main memory system; multislot system; optimum reflection coefficient; peak-to-peak time jitters; point-to point system; signal integrity; transmission line loss; Electric impedance; equalizers; interconnections; intersymbol interference (ISI); jitter; noise; routing;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems II: Express Briefs, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-7747
  • Type

    jour

  • DOI
    10.1109/TCSII.2010.2047312
  • Filename
    5462917