• DocumentCode
    1487838
  • Title

    60 GHz compact low noise amplifier in 65 nm CMOS

  • Author

    Kunze, J.W. ; Weyers, C. ; Mayr, Philipp ; Bilgic, A. ; Hausner, Jerry

  • Author_Institution
    Dept. of Electron. Eng. & Inf. Sci., Ruhr-Univ. Bochum, Bochum, Germany
  • Volume
    45
  • Issue
    20
  • fYear
    2009
  • Firstpage
    1035
  • Lastpage
    1036
  • Abstract
    A single-ended low noise amplifier in 65 nm CMOS for applications at 60 GHz is presented. Its measured gain and noise figure at the centre frequency of 57 GHz are 19.1 dB and 5.5 dB, respectively, and it provides wideband matching. Transistors in the design have an asymmetrically fingered layout which reduces parasitic capacitances while simultaneously allowing for higher channel current densities.
  • Keywords
    CMOS analogue integrated circuits; low noise amplifiers; CMOS; asymmetrically fingered layout; current densities; frequency 57 GHz; frequency 60 GHz; single-ended low noise amplifier; wideband matching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.0518
  • Filename
    5270387
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1487838