Design of an RF Transmit/Receive Switch Using LDMOSFETs With High Power Capability and Low Insertion Loss

Author

Hu, Chih-Min ; Hung, Chung-Yu ; Chu, Chun-Hsueh ; Chang, Da-Chiang ; Huang, Chih-Fang ; Gong, Jeng ; Chen, Ching-Yu

Author_Institution

Dept. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

58

Issue

6

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

1722

Lastpage

1727

Abstract

This paper presents, for the first time, the study of the application of a lateral diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) in a common-gate configuration to radio-frequency (RF) transmit/receive (T/R) switching circuits. A single-pole double-throw (SPDT) 900-MHz T/R switch is implemented using 0.25-LDMOSFET foundry technology. Measured results show that our switching circuit can achieve a low insertion loss of 0.82 dB and a high power handling capability of 27 dBm. This result is promising in integrating power management integrated circuits, RF power amplifiers, and switching circuits in a single chip, based on LDMOSFET technology, to realize an RF transmit front-end system-on-chip solution.

Keywords

UHF field effect transistors; UHF integrated circuits; UHF power amplifiers; field effect transistor switches; power integrated circuits; switching circuits; system-on-chip; LDMOSFET; RF power amplifier; RF transmit front-end system-on-chip solution; RF transmit-receive switch; SPDT; T-R switching circuit; common-gate configuration; frequency 900 MHz; high power handling capability; integrating power management integrated circuit; low insertion loss; module lateral diffused metal-oxide-semiconductor field- effect transistor; radio-frequency; single-pole double-throw; size 0.25 mum; Logic gates; Radio frequency; Silicon; Substrates; Switches; Switching circuits; Transistors; Lateral diffused metal–oxide–semiconductor (LDMOS); radio-frequency (RF) switches;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2127481

Filename

5742688