Comparison of high-power IGBT´s and hard-driven GTO´s for high-power inverters

Author

Bernet, Steffen ; Teichmann, Ralph ; Zuckerberger, Adrian ; Steimer, Peter K.

Author_Institution

Electr. Drive Syst., ABB Corp. Res., Heidelberg, Germany

Volume

35

Issue

2

fYear

1999

Firstpage

487

Lastpage

495

Abstract

This paper compares hard-driven gate-turn-off thyristors (IGCTs) and high-power insulated gate bipolar transistor (IGBT) modules in a two-level pulsewidth modulation inverter. The structure, fundamental operation and specific characteristics of the considered devices are shown. Simulations enable a loss comparison of IGCTs and IGBTs in a 1.14 MVA inverter at switching frequencies of f_s=250 Hz/500 Hz. The evaluation of device characteristics is the basis for a derivation of potential applications

Keywords

DC-AC power convertors; PWM invertors; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; switching circuits; thyristors; 1.14 MVA; 250 Hz; 500 Hz; IGBT; IGCT; device characteristics; hard-driven gate-turn-off thyristors; high-power inverters; insulated gate bipolar transistor; potential applications; switching frequencies; two-level PWM invertor; Insulated gate bipolar transistors; Pulse inverters; Pulse modulation; Pulse width modulation inverters; Semiconductor device manufacture; Semiconductor diodes; Switches; Switching frequency; Thyristors; Voltage;

fLanguage

English

Journal_Title

Industry Applications, IEEE Transactions on

Publisher

ieee

ISSN

0093-9994

Type

jour

DOI

10.1109/28.753645

Filename

753645