• DocumentCode
    1488763
  • Title

    Proton-Implantation-Isolated 4H-SiC Avalanche Photodiodes

  • Author

    Zhou, Qiugui ; Liu, Han-Din ; Mcintosh, Dion C. ; Hu, Chong ; Zheng, Xiaoguang ; Campbell, Joe C.

  • Author_Institution
    Electr. & Comput. Eng. Dept., Univ. of Virginia, Charlottesville, VA, USA
  • Volume
    21
  • Issue
    23
  • fYear
    2009
  • Firstpage
    1734
  • Lastpage
    1736
  • Abstract
    We report 4H-SiC p-i-n structure avalanche photodiodes (APDs) isolated by proton implantation. These APDs achieved low dark current (670 nA/cm2 at a gain of 1000) and gains as high as 105. The external quantum efficiency was 44% at 278 nm.
  • Keywords
    avalanche photodiodes; dark conductivity; hydrogen; ion implantation; p-i-n diodes; photodetectors; silicon compounds; ultraviolet detectors; wide band gap semiconductors; 4H-SiC avalanche photodiodes; SiC:H; dark current; external quantum efficiency; p-i-n structure; proton implantation; ultraviolet detectors; wavelength 278 nm; Avalanche photodiode (APD); photodetector;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2009.2032524
  • Filename
    5272233
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1488763