Hole distribution in InGaAsP 1.3-μm multiple-quantum-well laser structures with different hole confinement energies

Author

Silfvenius, Christofer ; Landgren, Gunnar ; Marcinkevicius, Saulius

Author_Institution

Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden

Volume

35

Issue

4

fYear

1999

fDate

4/1/1999 12:00:00 AM

Firstpage

603

Lastpage

607

Abstract

We have investigated the hole distribution in strained InGaAsP multiple-quantum-well (MQW) structures by direct hole transport measurements with time-resolved photoluminescence spectroscopy. The results show that the hole transport time over the MQW primarily depends on the hole confinement energy in the wells and increases sharply with the well depth. A simple thermionic emission model indicates that the heavy holes escape predominantly over the light-hole barrier edge for strain-compensated MQW structures. The results are corroborated with observed laser performance data

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; hole mobility; indium compounds; laser transitions; photoluminescence; quantum well lasers; thermionic emission; time resolved spectroscopy; 1.3 mum; InGaAsP; InGaAsP 1.3-μm multiple-quantum-well laser structures; direct hole transport measurements; heavy holes; hole confinement energies; hole confinement energy; hole distribution; hole transport time; light-hole barrier edge; observed laser performance data; strain-compensated MQW structures; strained InGaAsP MQW laser structures; thermionic emission model; time-resolved photoluminescence spectroscopy; well depth; Charge carrier density; Energy measurement; Laser modes; Laser theory; Optical materials; Photoluminescence; Quantum well devices; Radiative recombination; Semiconductor lasers; Ultrafast optics;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.753665

Filename

753665