Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior

Author

Ahmari, David A. ; Raghavan, Gopal ; Hartmann, Quesnell J. ; Hattendorf, Michael L. ; Feng, Milton ; Stillman, Gregory E.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

46

Issue

4

fYear

1999

fDate

4/1/1999 12:00:00 AM

Firstpage

634

Lastpage

640

Abstract

This work describes the temperature dependence of the DC and small-signal performance of InGaP/GaAs heterojunction bipolar transistors (HBT´s) with different collector thicknesses. Detailed analyses of the small-signal performance and the temperature dependence of both DC and high-frequency parameters are presented. An HBT delay-time analysis is also presented and justified empirically. In addition, the factors causing the decrease in f_T with temperature are described, and the variations in collector resistance and collector drift velocity with temperature are determined

Keywords

III-V semiconductors; delay estimation; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; 25 to 150 C; DC behavior; HBT delay-time analysis; InGaP-GaAs; InGaP/GaAs HBT; collector drift velocity; collector resistance; collector thicknesses; heterojunction bipolar transistor; high-frequency parameters; small-signal behavior; temperature dependence; Bipolar transistors; Delay; Electron mobility; Etching; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Metallization; Microelectronics; Temperature dependence;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.753694

Filename

753694