DocumentCode
148916
Title
Plasma assisted bonding of copper and silver substrates
Author
Fujino, Masahisa ; Abe, Kiyohiko ; Suga, Takashi
Author_Institution
Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan
fYear
2014
fDate
23-25 April 2014
Firstpage
648
Lastpage
651
Abstract
In this research, copper and silver substrates have been bonded by plasma activated bonding method at 190°C. Furthermore, additional formic acid process after plasma process for both surfaces had effect to be bonded more tightly. The surface conditions were analyzed by SEM, AFM and XPS. As results, silver surfaces were etched and smoothed by plasma, and the surface oxidation adsorbent was removed, according to XPS O1s spectra. Moreover, oxidation layer of silver surface was reduced by formic acid process. On the other hand, copper surface was less changed by plasma, but copper surface was also reduced, and copper precipitation was observed on the surface by formic acid process.
Keywords
X-ray photoelectron spectra; atomic force microscopy; bonding processes; oxidation; precipitation; scanning electron microscopy; sputter etching; AFM; Ag; Cu; SEM; XPS; copper precipitation; copper substrates; formic acid process; oxidation layer; plasma activated bonding; plasma assisted bonding; plasma etching; plasma process; plasma smoothing; silver substrates; surface conditions; surface oxidation adsorbent; temperature 190 degC; Bonding; Copper; Heating; Plasmas; Silver; Surface morphology; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging (ICEP), 2014 International Conference on
Conference_Location
Toyama
Print_ISBN
978-4-904090-10-7
Type
conf
DOI
10.1109/ICEP.2014.6826760
Filename
6826760
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