• DocumentCode
    148916
  • Title

    Plasma assisted bonding of copper and silver substrates

  • Author

    Fujino, Masahisa ; Abe, Kiyohiko ; Suga, Takashi

  • Author_Institution
    Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2014
  • fDate
    23-25 April 2014
  • Firstpage
    648
  • Lastpage
    651
  • Abstract
    In this research, copper and silver substrates have been bonded by plasma activated bonding method at 190°C. Furthermore, additional formic acid process after plasma process for both surfaces had effect to be bonded more tightly. The surface conditions were analyzed by SEM, AFM and XPS. As results, silver surfaces were etched and smoothed by plasma, and the surface oxidation adsorbent was removed, according to XPS O1s spectra. Moreover, oxidation layer of silver surface was reduced by formic acid process. On the other hand, copper surface was less changed by plasma, but copper surface was also reduced, and copper precipitation was observed on the surface by formic acid process.
  • Keywords
    X-ray photoelectron spectra; atomic force microscopy; bonding processes; oxidation; precipitation; scanning electron microscopy; sputter etching; AFM; Ag; Cu; SEM; XPS; copper precipitation; copper substrates; formic acid process; oxidation layer; plasma activated bonding; plasma assisted bonding; plasma etching; plasma process; plasma smoothing; silver substrates; surface conditions; surface oxidation adsorbent; temperature 190 degC; Bonding; Copper; Heating; Plasmas; Silver; Surface morphology; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging (ICEP), 2014 International Conference on
  • Conference_Location
    Toyama
  • Print_ISBN
    978-4-904090-10-7
  • Type

    conf

  • DOI
    10.1109/ICEP.2014.6826760
  • Filename
    6826760