• DocumentCode
    1489227
  • Title

    Poly-diamond gated field-emitter display cells

  • Author

    Hong, D. ; Aslam, D.M.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Eng., Michigan State Univ., East Lansing, MI, USA
  • Volume
    46
  • Issue
    4
  • fYear
    1999
  • fDate
    4/1/1999 12:00:00 AM
  • Firstpage
    787
  • Lastpage
    791
  • Abstract
    A microchip containing gated field-emitter display (FED) cells is designed and fabricated using vapor-deposited p-type polycrystalline diamond films and employing an integrated circuit (IC)-compatible diamond film technology on oxidized 4-in Si wafers. Current-voltage (I-V) data, measured in a diode configuration at 10-6 torr, show Fowler-Nordheim (F-N) field emission behavior. A 1×4 pixel diamond gated display cell is demonstrated for the first time using phosphor-coated glass as an anode
  • Keywords
    CVD coatings; diamond; elemental semiconductors; field emission displays; semiconductor thin films; 1E-6 torr; 4 in; C; CVD; Fowler-Nordheim field emission behavior; IC-compatible film technology; current-voltage data; diode configuration; gated field-emitter display cells; phosphor-coated glass anode; vapor-deposited p-type polycrystalline films; Anodes; Fabrication; Flat panel displays; Glass; Integrated circuit technology; Phosphors; Powders; Prototypes; Resists; Semiconductor films;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.753715
  • Filename
    753715
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1489227