DocumentCode
1489856
Title
Multicolor 
Light Emitting Diodes With Improved Emission Efficiency by Small Si Quantum Dots
Author
Lai, Bo-Han ; Cheng, Chih-Hsien ; Lin, Gong-Ru
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
47
Issue
5
fYear
2011
fDate
5/1/2011 12:00:00 AM
Firstpage
698
Lastpage
704
Abstract
In this paper, multicolor ITO/SiOx/p-Si/Al light emitting diodes (LEDs) made by Si quantum dot (Si-QD) embedded Si-rich SiOx grown by detuning the radio frequency (RF) plasma power under the plasma-enhanced chemical vapor deposition system are presented. With the Si-QD size shrinkage obtained by increasing the RF plasma powers from 30 to 70 W, the turn-on voltage of red, green, and blue ITO/SiOx/p-Si/Al LEDs is found to increase from 70 to 99 V, with the maximum electroluminescent power increasing from 9 to 423 nW.
Keywords
aluminium; electroluminescence; indium compounds; light emitting diodes; plasma CVD; semiconductor quantum dots; silicon; tin compounds; InSnO-SiO2-Si-Al; emission efficiency; maximum electroluminescent power; multicolor light emitting siodes; plasma-enhanced chemical vapor deposition; power 30 W to 70 W; power 9 nW to 423 nW; quantum dots; radiofrequency plasma power; size shrinkage; voltage 70 V to 99 V; Color; Indium tin oxide; Light emitting diodes; Plasmas; Radio frequency; Silicon; Tunneling; Electroluminescence; Si quantum dots; Si-rich ${rm SiO}_{rm x}$
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2011.2109699
Filename
5743091
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