Electron Transport Through Abrupt Type I Double Heterojunction Bipolar Transistors

Author

Ramon, Dan ; Lidji, Ron Liraz ; Elias, Doron Cohen ; Gavrilov, Arkady ; Cohen, Shimon ; Ritter, Dan

Author_Institution

Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel

Volume

57

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

1466

Lastpage

1469

Abstract

A model with two unknown parameters predicts the experimental current voltage characteristics of InP/GalnAs/InP double-heterojunction bipolar transistors. The model is based upon the calculation of the tunneling rate through the collector energy barrier. The two unknown parameters, i.e., electron temperature and electron lifetime in the base, are obtained by comparing experimental results and model calculations. The extracted electron temperature in the base ranged between 350 and 400 K, indicating that the energy relaxation times of electrons having energies lower than the longitudinal optical phonon energy are long compared with the electron lifetime.

Keywords

III-V semiconductors; electron transport theory; gallium arsenide; heterojunction bipolar transistors; indium compounds; InP-GaInAs-InP; collector energy barrier; current voltage characteristics; double-heterojunction bipolar transistors; electron lifetime; electron temperature; electron temperature extraction; electron transport; longitudinal optical phonon energy; Bipolar transistors; Current-voltage characteristics; Double heterojunction bipolar transistors; Electron optics; Energy barrier; Indium phosphide; Phonons; Predictive models; Temperature distribution; Tunneling; Electron temperature; electron transport; electron tunneling; heterojunction bipolar transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2047068

Filename

5464331