2-μm GaInSb-AlGaAsSb distributed-feedback lasers

Author

Bleuel, T. ; Muller, M. ; Forchel, A.

Author_Institution

Tech. Phys., Wurzburg Univ., Germany

Volume

13

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

553

Lastpage

555

Abstract

Room temperature continuous-wave operation of 2-μm single-mode InGaSb-AlGaAsSb distributed-feedback (DFB) lasers has been realized. The laser structure has been grown by solid source molecular beam epitaxy (MBE). Single-mode DFB emission is obtained by first-order Cr-Bragg gratings on both sides of the laser ridge. For a cavity with 900 μm length and 4 μm width, the threshold currents are around 20 mA and the continuous-wave output power is 10 mW at a drive current of 200 mA at 20/spl deg/C. Monomode emission with sidemode suppression ratios of 31 dB has been obtained.

Keywords

Bragg gratings; III-V semiconductors; aluminium compounds; current density; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser feedback; laser modes; molecular beam epitaxial growth; optical fabrication; quantum well lasers; ridge waveguides; waveguide lasers; 10 mW; 2 mum; 20 C; 20 mA; 200 mA; 298 K; 4 mum; 900 mum; Cr; GaInSb-AlGaAsSb; GaInSb-AlGaAsSb distributed-feedback lasers; continuous-wave output power; distributed-feedback lasers; drive current; first-order Cr-Bragg gratings; laser ridge; laser structure; monomode emission; room temperature continuous-wave operation; sidemode suppression ratios; single-mode DFB emission; single-mode distributed-feedback lasers; solid source molecular beam epitaxy; threshold currents; Bragg gratings; Gas lasers; Laser modes; Laser transitions; Molecular beam epitaxial growth; Optical coupling; Pulsed laser deposition; Quantum well lasers; Semiconductor lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.924017

Filename

924017