Pulsed microwave characterization of an SiGe heterojunction bipolar transistor

Author

Wartenberg, Scott A. ; Westgate, Charles R.

Author_Institution

Hewlett-Packard Co., Newark, CA, USA

Volume

47

Issue

4

fYear

1999

fDate

4/1/1999 12:00:00 AM

Firstpage

416

Lastpage

418

Abstract

This paper presents the first pulsed characterization of a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT). Comparison is made of the SiGe HBT´s performance to that of a Si bipolar junction transistor fabricated using the same mask set. Measurements made over a 400-μs pulse show how device self-heating dramatically affects the microwave-frequency response of the devices. Using pulse-profiled S-parameters to find the intrinsic base resistance r_π and base-collector capacitance C_jc, plots reveal how these two elements significantly vary over the length of the pulse. The results emphasize the need for accurate characterization of microwave Si-based devices in pulsed applications

Keywords

Ge-Si alloys; S-parameters; frequency response; heterojunction bipolar transistors; microwave bipolar transistors; microwave measurement; semiconductor device measurement; semiconductor materials; 400 mus; SiGe; base-collector capacitance; device self-heating; heterojunction bipolar transistor; intrinsic base resistance; mask set; microwave-frequency response; pulse-profiled S-parameters; pulsed microwave characterization; Capacitance; Electrical resistance measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave devices; Microwave measurements; Microwave transistors; Pulse measurements; Scattering parameters; Silicon germanium;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.754874

Filename

754874