Modeling of Stress-Retarded Thermal Oxidation of Nonplanar Silicon Structures for Realization of Nanoscale Devices

Author

Ma, Fa-Jun ; Rustagi, Subhash C. ; Samudra, Ganesh S. ; Zhao, Hui ; Singh, Navab ; Lo, Guo-Qiang ; Kwong, Dim-Lee

Author_Institution

Inst. of Microelectron., Agency for Sci., Technol. & Res. (A*STAR), Singapore, Singapore

Volume

31

Issue

7

fYear

2010

fDate

7/1/2010 12:00:00 AM

Firstpage

719

Lastpage

721

Abstract

Accurate modeling of stress-retarded orientation-dependent 2-D oxidation is carried out by matching the experimental and simulated oxide thicknesses of silicon FIN nanostructures over a wide range of temperatures and times in dry oxygen. Experimentally observed initial oxidation rate enhancement, orientation-dependent stress retardation, and self-limiting phenomena are modeled, and a new universal stress retardation parameter set is obtained for the first time. The new parameter set has been validated against oxidation experiments presented here and those reported in the literature. Furthermore, the new model is used to explore silicon nanowire shape engineering.

Keywords

nanoelectronics; nanowires; oxidation; dry oxygen; nanoscale device; nonplanar silicon structure; orientation-dependent stress retardation; oxidation rate enhancement; oxide thickness; self-limiting phenomena; silicon FIN nanostructure; silicon nanowire shape engineering; stress-retarded orientation-dependent 2D oxidation; stress-retarded thermal oxidation; universal stress retardation parameter set; 2-D oxidation; Nanowire (NW); orientation dependence; self-limiting; shape engineering; stress retardation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2047375

Filename

5466093