Radio-frequency performance of a state-of-the-art 0.5-μm-rule thin-film SOI power MOSFET

Author

Matsumoto, Satoshi ; Hiraoka, Yasushi ; Sakai, Tatsuo

Author_Institution

NTT Telecommun. Energy Lab., Kanagawa, Japan

Volume

48

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

1251

Lastpage

1255

Abstract

A state-of-the-art 0.5-μm-rule thin-film SOI power MOSFET was fabricated to evaluate its radio-frequency (RF) performance. The impact of the device structural parameters, such as channel length and drain offset length, on the RF performance of thin-film SOI power MOSFETs was also investigated. The fabricated device with channel length of 0.5 μm and drain offset length of 0.4 μm showed excellent performance. Its breakdown voltage was more than 10 V, which is sufficient for a lithium ion battery to be used as a power source. Its cutoff and maximum oscillation frequencies were 14.7 and 19 GHz, respectively. Its power-added efficiency at 2 GHz was 64%

Keywords

UHF field effect transistors; microwave field effect transistors; microwave power transistors; power MOSFET; silicon-on-insulator; thin film transistors; 0.4 micron; 0.5 micron; 10 V; 2 to 19 GHz; Li ion battery power source; RF performance; Si; breakdown voltage; channel length; device structural parameters; drain offset length; half micron design rule; radiofrequency performance; thin-film SOI power MOSFET; Cutoff frequency; Integrated circuit technology; MMICs; MOSFET circuits; Power MOSFET; Radio frequency; Structural engineering; Substrates; Thin film devices; Transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.925256

Filename

925256