High-voltage power integrated circuit technology using SOI for driving plasma display panels

Author

Kim, Jongdae ; Roh, Tae Moon ; Kim, Sang-Gi ; Song, Q. Sang ; Lee, Dae Woo ; Koo, Jin-Gun ; Cho, Kyoung-Ik ; Ma, Dong Sung

Author_Institution

Micro-Electron. Technol. Lab., Electron. & Telecommun. Res. Inst., Taejon, South Korea

Volume

48

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

1256

Lastpage

1263

Abstract

A new high-voltage (HV) power IC technology using high-performance p-LDMOS transistors and an excellent dielectric isolation technology has been proposed to apply the scan driver of color plasma display panel (C-PDP) system. This novel technique reduces over 40 process steps and results in smaller chip size area of the developed scan driver than that of conventional driver using conventional power IC technology. The chip size and the rise time of the PDP scan driver IC developed by this technology could be reduced by 35% and 60%, respectively, compared with the conventional design

Keywords

MOS analogue integrated circuits; driver circuits; isolation technology; plasma displays; power integrated circuits; silicon-on-insulator; SOI; chip size area; dielectric isolation technology; high-voltage power integrated circuit technology; p-LDMOS transistors; plasma display panels; process steps; rise time; scan driver; CMOS process; CMOS technology; Diodes; Driver circuits; Implants; Integrated circuit technology; Isolation technology; Moon; Plasma displays; Power integrated circuits;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.925257

Filename

925257