DocumentCode
1496315
Title
Enhanced Field Electron Emission From Zinc-Doped CuO Nanowires
Author
Tsai, Tsung-Ying ; Hsu, Cheng-Liang ; Chang, Shoou-Jinn ; Chen, Szu-I ; Hsueh, Han-Ting ; Hsueh, Ting-Jen
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
33
Issue
6
fYear
2012
fDate
6/1/2012 12:00:00 AM
Firstpage
887
Lastpage
889
Abstract
Zinc-doped copper oxide (CuO:Zn) nanowires (NWs) with Cu and Zn layers were grown by thermal oxidation on a glass template in ambient air. The Zn content in the CuO NWs was approximated 9.9%. Field emitters using these CuO:Zn NWs were also fabricated on the glass substrate and compared with those using NWs composed of CuO alone. The threshold fields of the CuO:Zn NW and CuO NW field emitters can be significantly decreased from 8.3 to 4.1 V/mm, and the work function can also be reduced from 4.5 to 1.54 eV by introducing Zn atoms into the CuO NWs.
Keywords
copper compounds; nanofabrication; nanowires; oxidation; zinc; CuO:Zn; electron volt energy 4.5 eV to 1.54 eV; field electron emission enhancement; field emitter; glass template; nanowire; thermal oxidation; Copper; Doping; Glass; Nanowires; Substrates; Zinc oxide; CuO nanowires (NWs); field electron emission; zinc doped;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2012.2190037
Filename
6184273
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