Spin Transfer Torque Memory With Thermal Assist Mechanism: A Case Study

Author

Xi, Haiwen ; Stricklin, John ; Li, Hai ; Chen, Yiran ; Wang, Xiaobin ; Zheng, Yuankai ; Gao, Zheng ; Tang, Michael X.

Author_Institution

Seagate Technol., Memory Products Group (MPG) R&D, Bloomington, MN, USA

Volume

46

Issue

3

fYear

2010

fDate

3/1/2010 12:00:00 AM

Firstpage

860

Lastpage

865

Abstract

We have investigated spin transfer torque random access memory (STT-RAM) with a thermal-assist programming scheme using finite-element thermal simulation. We conducted the study on a specific memory element design to analyze the thermal dynamics and thermal programming mechanism. We paid particular attention to the scalability and design potential of the thermal-assist programming scheme by varying the memory element dimension and resistance-area product. In addition we systematically analyzed and compared thermal-assisted STT-RAM and standard STT-RAM based on these results. Finally, we provide a summary of the programming scheme and some recommendations for improving writeability and scalability of this technology.

Keywords

MRAM devices; finite element analysis; finite element thermal simulation; memory element dimension; resistance-area product; spin transfer torque random access memory; thermal dynamics; thermal-assist programming scheme; thermal-assisted STT-RAM; Magnetic memories; magnetic tunnel junctions; spin transfer torques; thermal assist;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2009.2033674

Filename

5282575