DocumentCode
1497430
Title
5-W CW diffraction-limited InGaAs broad-area flared amplifier at 970 nm
Author
O´Brien, S. ; Schoenfelder, A. ; Lang, R.J.
Author_Institution
SDL Inc., San Jose, CA, USA
Volume
9
Issue
9
fYear
1997
Firstpage
1217
Lastpage
1219
Abstract
A broad-area flared amplifier is fabricated that produces 5-W continuous-wave (CW) at 972 nm in a single-lobed, diffraction-limited far-field pattern. A high-power, tunable diode laser is used as the injection source. An incident power of only 90-120 mW is required to saturate the gain of the amplifier.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; light diffraction; optical fabrication; optical saturation; quantum well lasers; 5 W; 90 to 120 mW; 972 nm; CW diffraction-limited InGaAs broad-area flared amplifier; InGaAs; QW active region; continuous-wave; external cavity; fabrication; gain saturation; high-power tunable diode laser; incident power; injection source; single-lobed diffraction-limited far-field pattern; Diode lasers; High power amplifiers; Indium gallium arsenide; Laser tuning; Lenses; Optical amplifiers; Optical diffraction; Oscillators; Power amplifiers; Tunable circuits and devices;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.618483
Filename
618483
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