Elimination of kink effect in fully depleted complementary buried-channel SOL MOSFET (FD CBCMOS) based on silicon direct bonding technology

Author

Tong, Qin-Yi ; Xu, Xiao-Li ; Zhang, Hui-Zhen

Author_Institution

Microelectron. Center, Southeast Univ., Nanjing, China

Volume

12

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

101

Lastpage

103

Abstract

For the fully depleted complementary buried-channel MOSFET (FD CBCMOS) discussed, although its operational principle is similar, its structure is different from that of the conventional buried-channel MOSFET in which a p-n junction exists at the surface of the channel region. Moreover, the p-n junction is totally eliminated in the device structure for both source and drain. Low interface charges in the silicon-on-insulator/silicon direct bonding (SOI/SDB) structure allow the fabrication of the FD CBCMOS. Numerical simulation and experimental measurement have demonstrated that no kink effect is present and that the device has the potential for VLSI applications due to the absence of the p-n junction and the superior SOI/SDB material quality.<>

Keywords

CMOS integrated circuits; insulated gate field effect transistors; integrated circuit technology; semiconductor device models; semiconductor technology; FD CBCMOS; SOI/SDB; SOL MOSFET; Si on insulator Si direct bonding structure; VLSI applications; device structure; experimental measurement; fabrication; fully depleted complementary buried-channel MOSFET; kink effect elimination; low interface charges; p-n junction elimination; Bonding; Breakdown voltage; MOSFET circuits; Numerical simulation; P-n junctions; Silicon; Substrates; Threshold voltage; Transconductance; Very large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.75725

Filename

75725