High-gain W band pseudomorphic InGaAs power HEMTs

Author

Streit, Dwight C. ; Tan, K.L. ; Dia, R.M. ; Liu, J.K. ; Han, A.C. ; Velebir, J.R. ; Wang, Shing K. ; Trinh, Tien Q. ; Chow, Pei-Ming D. ; Lui, P.H. ; Yen, H.C.

Author_Institution

TRW Electron. & Technol. Div., Redondo Beach, CA, USA

Volume

12

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

149

Lastpage

150

Abstract

The authors have fabricated 0.1- mu m T-gate pseudomorphic (PM) InGaAs power high-electron-mobility transistors (HEMTs) with record power and gain performance at 94 GHz. Devices with 40- mu m gate peripheries achieved 10.6-mW output power with 7.3-dB gain and 14.3% power-added efficiency (PAE). Devices with 160- mu m gate peripheries achieved 62.7-mW output power with 4.0-dB gain and 13.2% PAE. The authors believe the superior performance of these devices is due to the combination of a short 0.1- mu m T-gate, high-quality material, optimized device profile, and the reduction in source inductance due to source vias.<>

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; 0.1 micron; 10.6 mW; 14.3 percent; 7.3 dB; 94 GHz; InGaAs; PAE; T-gate; W band; device profile; gate peripheries; output power; power HEMTs; source inductance; source vias; Doping; Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; Inductance; Insertion loss; MODFETs; Performance gain; Power generation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.75746

Filename

75746