Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS

Author

Nayak, D.K. ; Woo, J.C.S. ; Park, J.S. ; Wang, K.L. ; MacWilliams, K.P.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

12

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

154

Lastpage

156

Abstract

The authors demonstrate the feasibility of a p-channel quantum-well MOSFET on a Ge/sub x/Si/sub 1-x//Si heterostructure. The advantages of the enhancement-mode p-channel MOSFET device compared to GeSi MODFETs are its high impedance, channel mobility, and channel transconductance. The device shows good saturation and cutoff behaviour. A saturation transconductance of 64 mS/mm was measured for a 0.7- mu m channel device at a drain-to-source voltage of -2.5 V. The channel mobility was found to be higher than that of a similarly processed Si p-channel MOSFET.<>

Keywords

Ge-Si alloys; carrier mobility; elemental semiconductors; insulated gate field effect transistors; semiconductor materials; semiconductor quantum wells; silicon; -2.5 V; 0.7 micron; Ge/sub x/Si/sub 1-x/-Si; PMOS; Si; channel mobility; channel transconductance; cutoff behaviour; drain-to-source voltage; enhancement-mode; impedance; p-channel quantum-well MOSFET; saturation; Germanium silicon alloys; HEMTs; Impedance; MODFETs; MOSFET circuits; Quantum well devices; Quantum wells; Silicon germanium; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.75748

Filename

75748