Evidence of Electrical Spin Injection Into Silicon Using MgO Tunnel Barrier

Author

Sasaki, Tomoyuki ; Oikawa, Tohru ; Suzuki, Toshio ; Shiraishi, Masashi ; Suzuki, Yoshishige ; Noguchi, Kiyoshi

Author_Institution

SQ Res. Center, TDK Corp., Nagano, Japan

Volume

46

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

1436

Lastpage

1439

Abstract

We demonstrate the evidence of electrical spin injection into silicon (Si) using the Fe/MgO tunnel barrier by the following two methods: 1) non-local (NL) four-terminal magnetoresistance (MR) scheme with their respective corresponding ferromagnetic (FM) electrode and 2) Hanle-type spin precession scheme. These results are compatible and in agreement with each other. The spin injection signals in the non-local scheme were observed up to 150 K, and the spin diffusion length (Â¿_N) was estimated to be 2.8 Â¿m at 8 K. The experimental data completely matches every detail of the Hanle measurements equation, and spin lifetime (Â¿) was estimated to be 9.44 ns at 8 K. We will be able to discuss the physical properties of a pure spin current in silicon by this compelling data.

Keywords

Hanle effect; ferromagnetism; iron; magnesium compounds; magnetoresistance; silicon; spin dynamics; spin polarised transport; Hanle measurements equation; Hanle-type spin precession; electrical spin injection; ferromagnetic electrode; nonlocal four-terminal magnetoresistance; physical properties; pure spin current; silicon; spin diffusion length; spin lifetime; temperature 150 K; tunnel barrier; Current measurement; Electrodes; Equations; Iron; Length measurement; Life estimation; Lifetime estimation; Silicon; Spin polarized transport; Tunneling magnetoresistance; Electrical spin detection; MgO tunnel burrier; electrical spin injection; silicon spintronics;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2010.2045347

Filename

5467455