Schottky Barrier Height in Fe/GaAs Films

Author

Fleet, L.R. ; Yoshida, K. ; Kobayashi, H. ; Ohno, Y. ; Kurebayashi, H. ; Kim, J.-Y. ; Barnes, C.H.W. ; Hirohata, A.

Author_Institution

Dept. of Phys., Univ. of York, York, UK

Volume

46

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

1737

Lastpage

1740

Abstract

We discuss the effect of annealing on the interfacial structure of Fe/GaAs films, with 2 Ã— 4 surface reconstructions, and the subsequent effect on the Schottky barrier height. Images of the interfaces indicate that the annealing process can greatly reduce the level of atomic mixing. A study of the I-V characteristics of Fe/GaAs Schottky barrier diodes, in a wide temperature range of 10-300 K, reveals a strong temperature dependence for the unannealed case, arising from the presence of mixed surface states. The annealing process reduces the existence of the interfacial states, leading to more ideal behavior, with a reduced temperature dependence of the Schottky behavior.

Keywords

III-V semiconductors; Schottky barriers; annealing; gallium arsenide; iron; surface states; Fe-GaAs; I-V characteristics; Schottky barrier diodes; Schottky barrier height; Schottky behavior; annealing process; atomic mixing; interfacial states; interfacial structure; mixed surface states; surface reconstructions; temperature 10 K to 300 K; temperature dependence; Annealing; Gallium arsenide; Iron; Magnetoelectronics; Material storage; Materials science and technology; Polarization; Proposals; Schottky barriers; Temperature dependence; Fe; GaAs and Schottky barrier; spin-polarized injection; spintronics;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2010.2045483

Filename

5467484