• DocumentCode
    1498870
  • Title

    Effects of electron effective mass on the multiquantum barrier structure in AlGaInP laser diodes

  • Author

    Chang, S.J. ; Su, Y.K. ; Chen, J.F. ; Wen, L.F. ; Huang, B.R.

  • Author_Institution
    Inst. of Microelectron., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    148
  • Issue
    2
  • fYear
    2001
  • fDate
    4/1/2001 12:00:00 AM
  • Firstpage
    117
  • Lastpage
    120
  • Abstract
    The effects of electron effective mass on the multiquantum barrier (MQB) structure in AlGaInP LD has been systematically studied. Using a new effective mass model, we found that we can achieve an enhanced barrier height of 1.68 U0 or 253 meV. However, such an increase in barrier height is much smaller than the previous reported value obtained using a different electron effective mass model. We also found that the chirped MQB (CMQB) can only enhance the barrier height by 0.276 U0. On the other hand, the enhanced barrier height can reach 2.2 U0 for a properly designed multistack MQB (MSMQB)
  • Keywords
    III-V semiconductors; aluminium compounds; effective mass; gallium compounds; indium compounds; quantum well lasers; semiconductor device models; 253 meV; AlGaInP; AlGaInP LD; AlGaInP laser diodes; barrier height; chirped MQB; effective mass model; electron effective mass; enhanced barrier height; multiquantum barrier structure; multistack MQB;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2433
  • Type

    jour

  • DOI
    10.1049/ip-opt:20010391
  • Filename
    926828
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1498870