DocumentCode
1498925
Title
Effect of Ionizing Radiation on Defects and 
Noise in Ge pMOSFETs
Author
Zhang, Cher Xuan ; Francis, Sarah Ashley ; Zhang, En Xia ; Fleetwood, Daniel M. ; Schrimpf, Ronald D. ; Galloway, Kenneth F. ; Simoen, Eddy ; Mitard, Jerome ; Claeys, Cor
Author_Institution
Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
Volume
58
Issue
3
fYear
2011
fDate
6/1/2011 12:00:00 AM
Firstpage
764
Lastpage
769
Abstract
The irradiation and annealing responses of Ge pMOSFETs have been investigated under transmission gate bias. Both the radiation-induced charge trapping and the low frequency (1/f) noise increase with total ionizing dose and decrease with annealing time. The smallest increases in noise after irradiation are observed for Ge pMOSFETs with the lowest halo implantation doses. The smallest increases in oxide and interface trap charge densities are obtained for devices with eight monolayers of Si at the interface, as compared to devices with five Si monolayers.
Keywords
1/f noise; MOSFET; elemental semiconductors; germanium; interface states; radiation hardening (electronics); semiconductor device noise; 1/f noise; Ge; annealing; halo implantation dose; interface trap charge densities; ionizing radiation; low frequency noise; pMOSFET; radiation-induced charge trapping; transmission gate bias; Annealing; Logic gates; MOSFETs; Noise; Radiation effects; Silicon; $1/f$ noise; border traps; germanium; total ionizing dose;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2011.2128347
Filename
5752886
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