Compact Model of Impact Ionization in LDMOS Transistors

Author

Yao, Wei ; Gildenblat, Gennady ; McAndrew, Colin C. ; Cassagnes, Alexandra

Author_Institution

Sch. of Electr., Comput., & Energy Eng., Arizona State Univ., Tempe, AZ, USA

Volume

59

Issue

7

fYear

2012

fDate

7/1/2012 12:00:00 AM

Firstpage

1863

Lastpage

1869

Abstract

This paper presents a compact model of impact ionization currents in lateral double-diffused MOS (LDMOS) transistors. Depending on bias conditions, impact ionization in LDMOS transistors primarily occurs either in the intrinsic MOSFET or in the drift region, leading to a “double-hump” substrate current behavior and enhanced drain current when both V_G and V_D are high. Impact ionization in the drift region also causes the “expansion” effect, which is modeled by making the drift region resistance a function of the impact ionization current in the same region. The new model is verified by comparison with TCAD simulations and experimental data. The interaction between the expansion effect and self-heating is also accurately captured by the model.

Keywords

MOSFET; impact ionisation; LDMOS transistor; TCAD simulation; bias condition; compact model; double-hump substrate current behavior; drain current; drift region resistance; expansion effect; impact ionization current; intrinsic MOSFET; lateral double-diffused MOS; self-heating; Data models; Impact ionization; Integrated circuit modeling; Logic gates; Semiconductor process modeling; Substrates; Transistors; Compact model; drift region; expansion effect; impact ionization; lateral double-diffused MOS (LDMOS); self-heating; surface potential;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2192934

Filename

6186814