DocumentCode
1500541
Title
Latch-back-free self-aligned power MOSFET structure with silicided source and body contact
Author
Koh, Yo-Hwan ; Kim, Choong-ki
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
Volume
9
Issue
8
fYear
1988
Firstpage
408
Lastpage
410
Abstract
A self-aligned vertical double-diffused power MOSFET structure with a very small source region formed by outdiffusion of phosphorous from the sidewall phosphosilicate glass (PSG) is proposed. The proposed structure eliminates the latch-back phenomena and also reduces the chip area. The first experimental results of the proposed structure fabricated with the mask set for a conventional device show latch-back-free I-V characteristics.<>
Keywords
insulated gate field effect transistors; power transistors; I-V characteristics; body contact; chip area; latch-back phenomena; mask set; outdiffusion; self-aligned vertical double-diffused power MOSFET; sidewall phosphosilicate glass; silicided source; source region; Artificial intelligence; Bipolar transistors; Electric resistance; Etching; Glass; Immune system; MOSFET circuits; Power MOSFET; Resistors; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.760
Filename
760
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