• DocumentCode
    1502956
  • Title

    Monitoring of paralleled IGBT/diode modules

  • Author

    Hofer-Noser, Patrick ; Karrer, Nicolas

  • Author_Institution
    ATLANTIS Solar Syst. Ltd., Bern, Switzerland
  • Volume
    14
  • Issue
    3
  • fYear
    1999
  • fDate
    5/1/1999 12:00:00 AM
  • Firstpage
    438
  • Lastpage
    444
  • Abstract
    A method is presented to monitor the state of a converter with an unlimited number of paralleled insulated gate bipolar transistor (IGBT)/diode modules with individual gate drives. The monitoring functions can be implemented without extra signal processing or load-side components. The method is based on the active gate-controlled current balancing (CB) principle. This principle is reviewed in the first part of this paper, and the necessary supplements to implement the monitoring functions are shown. In the second part, experimental measurements are shown. This new control method allows monitoring the state of a converter and balancing the losses and current sharing between paralleled power devices, without the need to match the devices nor the gate drives. Thus, the overall reliability can be increased without increasing the costs. Since no matching of the devices is needed, the handling and logistic costs can be significantly reduced. IGBT/diode modules for standard paralleling are selected, and only modules of the same class can be paralleled without excessive derating. The presented method allows switching off one of the paralleled branches in the case of parameter degradation and to keep the converter operating at a lower power
  • Keywords
    driver circuits; electric current control; insulated gate bipolar transistors; modules; power convertors; power semiconductor diodes; reliability; active gate-controlled current balancing; control method; converter state monitoring; current sharing; gate drives; handling costs; logistic costs; losses; paralleled IGBT/diode modules monitoring; paralleled insulated gate bipolar transistor; reliability; Circuits; Costs; Inductance; Insulated gate bipolar transistors; Monitoring; Multichip modules; Power generation economics; Power semiconductor switches; Semiconductor diodes; Switching converters;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/63.761687
  • Filename
    761687